DIODES DST857BDJ-7

DIODES · Transistors (BJTs) · MPN DST857BDJ-7

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Specifications

Current - Collector Cutoff15nA
DC Current Gain470
Collector - Emitter Voltage VCEO45V
Pd - Power Dissipation300mW
Emitter-Base Voltage VEBO6V
Transition frequency(fT)340MHz
Vce Saturation(VCE(sat))70mV
typePNP
Number2 PNP
Current - Collector(Ic)100mA
Operating Temperature-55℃~+150℃

Technical details

Bipolar (BJT) Transistor PNP 45V 100mA 300mW Surface Mount SOT-963

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