DIODES DST847BPDP6-7

DIODES · Transistors (BJTs) · MPN DST847BPDP6-7

No reviews yet — be the first to review DIODES DST847BPDP6-7.

Specifications

Current - Collector Cutoff15nA
DC Current Gain200
Collector - Emitter Voltage VCEO45V
Pd - Power Dissipation300mW
Emitter-Base Voltage VEBO6V
Transition frequency(fT)175MHz
typeNPN+PNP
Vce Saturation(VCE(sat))50mV
Number1 NPN + 1 PNP
Current - Collector(Ic)100mA
Operating Temperature-55℃~+150℃

Technical details

Bipolar (BJT) Transistor NPN+PNP 45V 100mA 175MHz 300mW Surface Mount SOT-963-6

Related Transistors (BJTs)