DIODES DSS60601MZ4-13

DIODES · Transistors (BJTs) · MPN DSS60601MZ4-13

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Specifications

Current - Collector Cutoff50uA
Transition frequency(fT)100MHz
Collector - Emitter Voltage VCEO60V
Emitter-Base Voltage VEBO6V
DC Current Gain120
Pd - Power Dissipation3W
Number1 NPN
typeNPN
Current - Collector(Ic)6A
Operating Temperature-55℃~+150℃
Vce Saturation(VCE(sat))220mV

Technical details

Bipolar (BJT) Transistor NPN 60V 6A 100MHz 3W Surface Mount SOT-223

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