DIODES DSS5540X-13

DIODES · Transistors (BJTs) · MPN DSS5540X-13

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Specifications

Current - Collector Cutoff50uA
Transition frequency(fT)60MHz
Collector - Emitter Voltage VCEO40V
Emitter-Base Voltage VEBO6V
DC Current Gain150
Pd - Power Dissipation900mW
Number1 PNP
typePNP
Current - Collector(Ic)4A
Operating Temperature-55℃~+150℃
Vce Saturation(VCE(sat))70mV

Technical details

Bipolar (BJT) Transistor PNP 40V 4A 60MHz 0.9W Surface Mount SOT-89

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