DIODES DSS5220T-13

DIODES · Transistors (BJTs) · MPN DSS5220T-13

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Specifications

Current - Collector Cutoff50uA
Transition frequency(fT)100MHz
Collector - Emitter Voltage VCEO20V
Emitter-Base Voltage VEBO7V
DC Current Gain200
Pd - Power Dissipation1.2W
Number1 PNP
typePNP
Current - Collector(Ic)2A
Vce Saturation(VCE(sat))150mV
Operating Temperature-55℃~+150℃

Technical details

Bipolar (BJT) Transistor PNP 20V 2A 100MHz 1.2W Surface Mount SOT-23

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