DIODES DSS4160V-7

DIODES · Transistors (BJTs) · MPN DSS4160V-7

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Specifications

Current - Collector Cutoff100nA
Transition frequency(fT)150MHz
Collector - Emitter Voltage VCEO60V
DC Current Gain200
Pd - Power Dissipation600mW
typeNPN
Current - Collector(Ic)1A
Operating Temperature-55℃~+150℃
Vce Saturation(VCE(sat))-

Technical details

60V 200 NPN 1A SOT-563 Single Bipolar Transistors RoHS

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