DIODES DSS4160FDBQ-7

DIODES · Transistors (BJTs) · MPN DSS4160FDBQ-7

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Specifications

Current - Collector Cutoff100nA
Pd - Power Dissipation2.47W
Collector - Emitter Voltage VCEO60V
Emitter-Base Voltage VEBO7V
typeNPN
Vce Saturation(VCE(sat))220mV
Number2 NPN
Current - Collector(Ic)1A

Technical details

2.47W 60V NPN 1A UDFN2020-6 Bipolar Transistor Arrays RoHS

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