DIODES DSS4160DS-7

DIODES · Transistors (BJTs) · MPN DSS4160DS-7

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Specifications

Current - Collector Cutoff100nA
DC Current Gain100
Collector - Emitter Voltage VCEO60V
Pd - Power Dissipation700mW
Emitter-Base Voltage VEBO5V
Transition frequency(fT)220MHz
Vce Saturation(VCE(sat))100mV
typeNPN
Number2 NPN
Current - Collector(Ic)1A
Operating Temperature-55℃~+150℃

Technical details

Bipolar (BJT) Transistor NPN 60V 1A 700mW Surface Mount SOT-26

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