DIODES · Transistors (BJTs) · MPN DSS4160DS-7
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| Current - Collector Cutoff | 100nA |
|---|---|
| DC Current Gain | 100 |
| Collector - Emitter Voltage VCEO | 60V |
| Pd - Power Dissipation | 700mW |
| Emitter-Base Voltage VEBO | 5V |
| Transition frequency(fT) | 220MHz |
| Vce Saturation(VCE(sat)) | 100mV |
| type | NPN |
| Number | 2 NPN |
| Current - Collector(Ic) | 1A |
| Operating Temperature | -55℃~+150℃ |
Bipolar (BJT) Transistor NPN 60V 1A 700mW Surface Mount SOT-26