DIODES DSS30101L-7

DIODES · Transistors (BJTs) · MPN DSS30101L-7

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Specifications

Current - Collector Cutoff100nA
Transition frequency(fT)250MHz
Collector - Emitter Voltage VCEO30V
Emitter-Base Voltage VEBO5V
DC Current Gain300
Pd - Power Dissipation600mW
Number1 NPN
typeNPN
Current - Collector(Ic)1A
Operating Temperature-55℃~+150℃
Vce Saturation(VCE(sat))200mV

Technical details

Bipolar (BJT) Transistor NPN 30V 1A 250MHz 600mW Surface Mount SOT-23

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