DIODES DSS20201L-7

DIODES · Transistors (BJTs) · MPN DSS20201L-7

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Specifications

Current - Collector Cutoff100nA
Transition frequency(fT)150MHz
Collector - Emitter Voltage VCEO20V
Emitter-Base Voltage VEBO6V
DC Current Gain200
Pd - Power Dissipation600mW
Number1 NPN
typeNPN
Current - Collector(Ic)2A
Operating Temperature-55℃~+150℃
Vce Saturation(VCE(sat))40mV

Technical details

Bipolar (BJT) Transistor NPN 20V 2A 150MHz 600mW Surface Mount SOT-23

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