DIODES DPLS4140E-13

DIODES · Transistors (BJTs) · MPN DPLS4140E-13

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Specifications

Current - Collector Cutoff20nA
Transition frequency(fT)150MHz
Collector - Emitter Voltage VCEO140V
Emitter-Base Voltage VEBO7V
DC Current Gain100
Pd - Power Dissipation1W
Number1 PNP
typePNP
Current - Collector(Ic)4A
Operating Temperature-55℃~+150℃
Vce Saturation(VCE(sat))175mV

Technical details

140V 100 1 PNP PNP 4A SOT-223-4 Single Bipolar Transistors RoHS

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