DIODES DP0150BLP4-7B

DIODES · Transistors (BJTs) · MPN DP0150BLP4-7B

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Specifications

Current - Collector Cutoff50nA
Transition frequency(fT)80MHz
Collector - Emitter Voltage VCEO50V
Emitter-Base Voltage VEBO6V
DC Current Gain200
Pd - Power Dissipation1W
Number1 PNP
typePNP
Current - Collector(Ic)100mA
Vce Saturation(VCE(sat))300mV
Operating Temperature-55℃~+150℃

Technical details

Bipolar (BJT) Transistor PNP 50V 100mA 80MHz 1000mW Surface Mount DFN-3(1x0.6)

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