DIODES DP0150BLP4-7

DIODES · Transistors (BJTs) · MPN DP0150BLP4-7

No reviews yet — be the first to review DIODES DP0150BLP4-7.

Specifications

Current - Collector Cutoff50nA
Transition frequency(fT)80MHz
Collector - Emitter Voltage VCEO50V
Emitter-Base Voltage VEBO6V
DC Current Gain200
Pd - Power Dissipation1W
Number1 PNP
typePNP
Current - Collector(Ic)100mA
Operating Temperature-55℃~+150℃
Vce Saturation(VCE(sat))300mV

Technical details

Bipolar (BJT) Transistor PNP 50V 100mA 80MHz 1W Surface Mount X2-DFN1006-3

Related Transistors (BJTs)