DIODES DNLS350E-13

DIODES · Transistors (BJTs) · MPN DNLS350E-13

No reviews yet — be the first to review DIODES DNLS350E-13.

Specifications

Current - Collector Cutoff50uA
Transition frequency(fT)100MHz
Collector - Emitter Voltage VCEO50V
Emitter-Base Voltage VEBO6V
DC Current Gain200
Pd - Power Dissipation3W
Number1 NPN
typeNPN
Current - Collector(Ic)3A
Operating Temperature-55℃~+150℃
Vce Saturation(VCE(sat))170mV

Technical details

Bipolar (BJT) Transistor NPN 50V 3A 100MHz 3W Surface Mount SOT-223

Related Transistors (BJTs)