DIODES DNLS320E-13

DIODES · Transistors (BJTs) · MPN DNLS320E-13

No reviews yet — be the first to review DIODES DNLS320E-13.

Specifications

Current - Collector Cutoff100nA
Transition frequency(fT)150MHz
Collector - Emitter Voltage VCEO20V
Emitter-Base Voltage VEBO5V
DC Current Gain400
Pd - Power Dissipation1W
Number1 NPN
typeNPN
Current - Collector(Ic)3A
Operating Temperature-55℃~+150℃
Vce Saturation(VCE(sat))180mV

Technical details

Bipolar (BJT) Transistor NPN 20V 3A 150MHz 1W Surface Mount SOT-223

Related Transistors (BJTs)