DIODES DNLS160-7

DIODES · Transistors (BJTs) · MPN DNLS160-7

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Specifications

Current - Collector Cutoff50uA
Transition frequency(fT)270MHz
Collector - Emitter Voltage VCEO60V
Emitter-Base Voltage VEBO5V
DC Current Gain100
Pd - Power Dissipation300mW
Number1 NPN
typeNPN
Current - Collector(Ic)1A
Operating Temperature-55℃~+150℃
Vce Saturation(VCE(sat))140mV

Technical details

Bipolar (BJT) Transistor NPN 60V 1A 300mW Surface Mount SOT-23

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