DIODES DN350T05-7

DIODES · Transistors (BJTs) · MPN DN350T05-7

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Specifications

Current - Collector Cutoff50nA
Transition frequency(fT)50MHz
Collector - Emitter Voltage VCEO350V
Emitter-Base Voltage VEBO5V
DC Current Gain30
Pd - Power Dissipation300mW
Number1 NPN
typeNPN
Current - Collector(Ic)500mA
Operating Temperature-65℃~+150℃
Vce Saturation(VCE(sat))300mV

Technical details

Bipolar (BJT) Transistor NPN 350V 500mA 50MHz 300mW Surface Mount SOT-23

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