DIODES DMJT9435-13

DIODES · Transistors (BJTs) · MPN DMJT9435-13

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Specifications

Current - Collector Cutoff200uA
Transition frequency(fT)160MHz
Collector - Emitter Voltage VCEO30V
Emitter-Base Voltage VEBO6V
DC Current Gain125
Pd - Power Dissipation3W
typePNP
Current - Collector(Ic)3A
Operating Temperature-55℃~+150℃
Vce Saturation(VCE(sat))275mV

Technical details

30V 125 PNP 3A SOT-223-3 Single Bipolar Transistors RoHS

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