DIODES DJT4031N-13

DIODES · Transistors (BJTs) · MPN DJT4031N-13

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Specifications

Current - Collector Cutoff100nA
Transition frequency(fT)105MHz
Collector - Emitter Voltage VCEO40V
Emitter-Base Voltage VEBO6V
DC Current Gain200
Pd - Power Dissipation1.2W
Number1 NPN
typeNPN
Current - Collector(Ic)3A
Operating Temperature-55℃~+150℃
Vce Saturation(VCE(sat))150mV

Technical details

Bipolar (BJT) Transistor NPN 40V 3A 105MHz 1.2W Surface Mount SOT-223

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