DIODES DJT4030P-13

DIODES · Transistors (BJTs) · MPN DJT4030P-13

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Specifications

Current - Collector Cutoff100nA
Transition frequency(fT)150MHz
Collector - Emitter Voltage VCEO40V
Emitter-Base Voltage VEBO6V
DC Current Gain200
Pd - Power Dissipation2W
Number1 PNP
typePNP
Current - Collector(Ic)3A
Operating Temperature-55℃~+150℃
Vce Saturation(VCE(sat))500mV

Technical details

Bipolar (BJT) Transistor PNP 40V 3A 150MHz 2W Surface Mount SOT-223

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