DIODES · Power Management ICs · MPN DGD2103MS8-13
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| Input Logic Level - Low | - |
|---|---|
| Low Level Delay Time | 680ns |
| High Level Delay Time | 150ns |
| Quiescent Current | 350uA |
| Input Logic Level - High | - |
| Operating Temperature | -40℃~+125℃ |
| Voltage - Supply | 10V~20V |
| Driven Configuration | Half-Bridge |
| Current - Output Low(IOL) | 600mA |
| Rise Time | 70ns |
| Fall Time | 35ns |
| Features | Under Voltage Protection;Dead-time control;Interleaved conduction protection |
Half-Bridge Gate Driver IC MOSFET IGBT SOIC-8