DIODES DDTD113EC-7-F

DIODES · Transistors (BJTs) · MPN DDTD113EC-7-F

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Specifications

Transition frequency(fT)200MHz
Collector - Emitter Voltage VCEO50V
Emitter-Base Voltage VEBO5V
DC Current Gain33
Vce Saturation(VCE(sat))300mV
Operating Temperature-55℃~+150℃
Current - Collector(Ic)500mA
Output Voltage(VO(on))300mV
Input Resistor1kΩ
Resistor Ratio-
Pd - Power Dissipation200mW
Input Voltage (VI(on)@Ic,Vce)3V

Technical details

Pre-Biased Bipolar Transistor (BJT) 40V 500mA 200mW Surface Mount SOT-23

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