DIODES DDTC123JLP-7

DIODES · Transistors (BJTs) · MPN DDTC123JLP-7

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Specifications

Current - Collector Cutoff0.5uA
Transition frequency(fT)250MHz
Collector - Emitter Voltage VCEO50V
DC Current Gain180
Emitter-Base Voltage VEBO4.5V
Vce Saturation(VCE(sat))200mV
Operating Temperature-55℃~+150℃
Current - Collector(Ic)100mA
Output Voltage(VO(on))300mV@50mA,2.5mA
Input Resistor2.2kΩ
Pd - Power Dissipation250mW
Input Voltage (VI(on)@Ic,Vce)1.1V

Technical details

Pre-Biased Bipolar Transistor (BJT) 50V 100mA 250mW Surface Mount DFN-3(1x0.6)

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