DIODES DDTC114YLP-7

DIODES · Transistors (BJTs) · MPN DDTC114YLP-7

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Specifications

Current - Collector Cutoff0.5uA
Transition frequency(fT)250MHz
Collector - Emitter Voltage VCEO50V
Emitter-Base Voltage VEBO4.5V
DC Current Gain180
Vce Saturation(VCE(sat))200mV
Operating Temperature-55℃~+150℃
Current - Collector(Ic)100mA
Output Voltage(VO(on))300mV
Input Resistor10kΩ
Resistor Ratio-
Pd - Power Dissipation250mW

Technical details

Pre-Biased Bipolar Transistor (BJT) 50V 100mA 250mW Surface Mount DFN-3(1x0.6)

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