DIODES DDTC114ELP-7

DIODES · Transistors (BJTs) · MPN DDTC114ELP-7

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Specifications

Current - Collector Cutoff0.1uA
Transition frequency(fT)250MHz
Collector - Emitter Voltage VCEO50V
DC Current Gain60
Vce Saturation(VCE(sat))300mV
Operating Temperature-55℃~+150℃
Current - Collector(Ic)100mA
Output Voltage(VO(on))250mV
Input Resistor13kΩ
Resistor Ratio1
Pd - Power Dissipation250mW
Input Voltage (VI(on)@Ic,Vce)2.5V

Technical details

Pre-Biased Bipolar Transistor (BJT) 50V 100mA 250mW Surface Mount DFN1006-3

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