DIODES DDTC114ECAQ-13-F

DIODES · Transistors (BJTs) · MPN DDTC114ECAQ-13-F

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Specifications

Current - Collector Cutoff-
Transition frequency(fT)250MHz
Collector - Emitter Voltage VCEO50V
Emitter-Base Voltage VEBO-
DC Current Gain35
Vce Saturation(VCE(sat))-
Operating Temperature-55℃~+150℃
Current - Collector(Ic)100mA
Output Voltage(VO(on))-
Input Resistor-
Resistor Ratio1
Pd - Power Dissipation200mW

Technical details

50V 35 100mA 200mW NPN 1 NPN (Pre-Biased) SOT-23-3 Single, Pre-Biased Bipolar Transistors RoHS

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