DIODES DDTB122TC-7-F

DIODES · Transistors (BJTs) · MPN DDTB122TC-7-F

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Specifications

Current - Collector Cutoff500nA
Transition frequency(fT)200MHz
Collector - Emitter Voltage VCEO50V
Emitter-Base Voltage VEBO5V
DC Current Gain100
Vce Saturation(VCE(sat))300mV
Operating Temperature-55℃~+150℃
Current - Collector(Ic)500mA
Output Voltage(VO(on))-
Input Resistor220Ω
Pd - Power Dissipation200mW
Input Voltage (VI(on)@Ic,Vce)2V

Technical details

Pre-Biased Bipolar Transistor (BJT) 40V 500mA 200mW Surface Mount SOT-23

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