DIODES DDTA144ELP-7

DIODES · Transistors (BJTs) · MPN DDTA144ELP-7

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Specifications

Current - Collector Cutoff100nA
Transition frequency(fT)250MHz
Collector - Emitter Voltage VCEO50V
Emitter-Base Voltage VEBO4.5V
DC Current Gain100
Vce Saturation(VCE(sat))800mV
Operating Temperature-55℃~+150℃
Current - Collector(Ic)200mA
Output Voltage(VO(on))150mV
Input Resistor47kΩ
Resistor Ratio1
Pd - Power Dissipation250mW

Technical details

Pre-Biased Bipolar Transistor (BJT) 50V 200mA 250mW Surface Mount DFN1006-3

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