DIODES DDTA143ZE-7-F

DIODES · Transistors (BJTs) · MPN DDTA143ZE-7-F

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Specifications

Current - Collector Cutoff-
Transition frequency(fT)250MHz
Collector - Emitter Voltage VCEO50V
Emitter-Base Voltage VEBO-
DC Current Gain80
Vce Saturation(VCE(sat))-
Operating Temperature-55℃~+150℃
Current - Collector(Ic)100mA
Output Voltage(VO(on))300mV@5mA,250uA
Input Resistor4.7kΩ
Resistor Ratio10
Pd - Power Dissipation150mW

Technical details

Pre-Biased Bipolar Transistor (BJT) 1 PNP Pre-Biased 50V 100mA 150mW Surface Mount SOT-523

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