DIODES DDTA115TCA-7-F

DIODES · Transistors (BJTs) · MPN DDTA115TCA-7-F

No reviews yet — be the first to review DIODES DDTA115TCA-7-F.

Specifications

Current - Collector Cutoff0.5uA
Transition frequency(fT)250MHz
Collector - Emitter Voltage VCEO50V
Emitter-Base Voltage VEBO5V
DC Current Gain100
Operating Temperature-55℃~+150℃
Current - Collector(Ic)100mA
Input Resistor100kΩ
typePNP
Number1 PNP Pre-Biased
Pd - Power Dissipation200mW

Technical details

Pre-Biased Bipolar Transistor (BJT) 1 PNP Pre-Biased 50V 100mA 200mW Surface Mount SOT-23

Related Transistors (BJTs)