DIODES DDTA114WE-7-F

DIODES · Transistors (BJTs) · MPN DDTA114WE-7-F

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Specifications

Current - Collector Cutoff-
Transition frequency(fT)250MHz
Collector - Emitter Voltage VCEO50V
Emitter-Base Voltage VEBO-
DC Current Gain24
Vce Saturation(VCE(sat))-
Operating Temperature-55℃~+150℃
Current - Collector(Ic)100mA
Output Voltage(VO(on))300mV@10mA,0.5mA
Input Resistor-
Resistor Ratio0.47
Pd - Power Dissipation150mW

Technical details

50V 24 100mA 150mW 1 PNP Pre-Biased SOT-523 Single, Pre-Biased Bipolar Transistors RoHS

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