DIODES DDTA114EE-7-F

DIODES · Transistors (BJTs) · MPN DDTA114EE-7-F

No reviews yet — be the first to review DIODES DDTA114EE-7-F.

Specifications

Transition frequency(fT)250MHz
Collector - Emitter Voltage VCEO50V
DC Current Gain30
Vce Saturation(VCE(sat))300mV
Operating Temperature-55℃~+150℃
Current - Collector(Ic)100mA
Output Voltage(VO(on))-
Input Resistor10kΩ
Resistor Ratio1
Pd - Power Dissipation150mW
Voltage - Input(Max)(VI(off))500mV
Input Voltage (VI(on)@Ic,Vce)3V@10mA,300mV

Technical details

Pre-Biased Bipolar Transistor (BJT) 1 PNP Pre-Biased 50V 100mA 150mW Surface Mount SOT-523

Related Transistors (BJTs)