DIODES DDC123JU-7-F

DIODES · Transistors (BJTs) · MPN DDC123JU-7-F

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Specifications

Transition frequency(fT)250MHz
Emitter-Base Voltage VEBO5V
DC Current Gain100
Output Voltage(VO(on))300mV
Input Resistor2.2kΩ
Resistor Ratio-
Pd - Power Dissipation200mW
Input Voltage (VI(on)@Ic,Vce)1.1V@5mA,0.3V
Voltage - Input(Max)(VI(off))500mV
Current - Collector(Ic)100mA
Collector - Emitter Voltage VCEO50V
typeNPN

Technical details

Pre-Biased Bipolar Transistor (BJT) 50V 100mA 200mW Surface Mount SOT-363

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