DIODES DDC115EU-7-F

DIODES · Transistors (BJTs) · MPN DDC115EU-7-F

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Specifications

DC Current Gain100
Output Voltage(VO(on))300mV
Input Resistor100kΩ
Resistor Ratio1
Number2 NPN (Pre-Biased)
Pd - Power Dissipation200mW
Input Voltage (VI(on)@Ic,Vce)3V
Voltage - Input(Max)(VI(off))500mV
Current - Collector(Ic)100mA
Collector - Emitter Voltage VCEO50V
Operating Temperature-55℃~+150℃

Technical details

Pre-Biased Bipolar Transistor (BJT) 2 NPN Pre-Biased Transistor 50V 100mA 200mW Surface Mount SOT-363

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