DIODES DDC114YH-7

DIODES · Transistors (BJTs) · MPN DDC114YH-7

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Specifications

Transition frequency(fT)250MHz
Emitter-Base Voltage VEBO5V
DC Current Gain100
typeNPN
Output Voltage(VO(on))300mV@10mA,0.5mA
Resistor Ratio-
Number2 NPN (Pre-Biased)
Pd - Power Dissipation150mW
Input Voltage (VI(on)@Ic,Vce)1.4V
Voltage - Input(Max)(VI(off))1.9V
Current - Collector(Ic)70mA
Collector - Emitter Voltage VCEO50V

Technical details

Pre-Biased Bipolar Transistor (BJT) 50V 70mA 150mW Surface Mount SOT-563

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