DIODES DDC114TH-7

DIODES · Transistors (BJTs) · MPN DDC114TH-7

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Specifications

Current - Collector Cutoff0.5uA
Transition frequency(fT)250MHz
Emitter-Base Voltage VEBO5V
DC Current Gain100
Vce Saturation(VCE(sat))300mV
Output Voltage(VO(on))300mV
Pd - Power Dissipation150mW
Input Voltage (VI(on)@Ic,Vce)1.4V
Voltage - Input(Max)(VI(off))1.9V
Current - Collector(Ic)100mA
Collector - Emitter Voltage VCEO50V
typeNPN

Technical details

Pre-Biased Bipolar Transistor (BJT) 50V 100mA 150mW Surface Mount SOT-563

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