DIODES DDC114EUQ-7-F

DIODES · Transistors (BJTs) · MPN DDC114EUQ-7-F

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Specifications

DC Current Gain100
Output Voltage(VO(on))-
Input Resistor10kΩ
Resistor Ratio1
Number2 NPN (Pre-Biased)
Pd - Power Dissipation200mW
Input Voltage (VI(on)@Ic,Vce)1.9V
Voltage - Input(Max)(VI(off))500mV
Current - Collector(Ic)50mA
Collector - Emitter Voltage VCEO50V
Operating Temperature-55℃~+150℃

Technical details

Pre-Biased Bipolar Transistor (BJT) 2 NPN Pre-Biased Transistor 50V 50mA 200mW Surface Mount SOT-363

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