DIODES DDC113TU-7-F

DIODES · Transistors (BJTs) · MPN DDC113TU-7-F

No reviews yet — be the first to review DIODES DDC113TU-7-F.

Specifications

Current - Collector Cutoff0.5uA
Transition frequency(fT)250MHz
Emitter-Base Voltage VEBO5V
DC Current Gain100
typeNPN
Input Resistor1kΩ
Number2 NPN (Pre-Biased)
Pd - Power Dissipation200mW
Current - Collector(Ic)100mA
Collector - Emitter Voltage VCEO50V
Operating Temperature-55℃~+150℃

Technical details

Pre-Biased Bipolar Transistor (BJT) 50V 100mA 200mW Surface Mount SOT-363

Related Transistors (BJTs)