DIODES DDA124EH-7

DIODES · Transistors (BJTs) · MPN DDA124EH-7

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Specifications

Transition frequency(fT)250MHz
Emitter-Base Voltage VEBO5V
DC Current Gain100
typeNPN+PNP
Output Voltage(VO(on))-
Resistor Ratio1
Number2 PNP Pre-Biased Transistors
Pd - Power Dissipation150mW
Input Voltage (VI(on)@Ic,Vce)3V@5mA,300mV
Voltage - Input(Max)(VI(off))1.9V
Current - Collector(Ic)100mA
Collector - Emitter Voltage VCEO50V

Technical details

Pre-Biased Bipolar Transistor (BJT) 2 PNP Pre-Biased Transistors 50V 100mA 150mW Surface Mount SOT-563

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