DIODES DDA114EH-7

DIODES · Transistors (BJTs) · MPN DDA114EH-7

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Specifications

DC Current Gain30
Number2 PNP Pre-Biased Transistors
Pd - Power Dissipation150mW
Current - Collector(Ic)100mA
Collector - Emitter Voltage VCEO50V
Operating Temperature-55℃~+150℃

Technical details

30 2 PNP Pre-Biased Transistors 150mW 100mA 50V SOT-563 Bipolar Transistor Arrays, Pre-Biased RoHS

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