DIODES DCX115EU-7-F

DIODES · Transistors (BJTs) · MPN DCX115EU-7-F

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Specifications

Current - Collector Cutoff-
Transition frequency(fT)250MHz
Emitter-Base Voltage VEBO-
DC Current Gain100
Vce Saturation(VCE(sat))-
Output Voltage(VO(on))300mV
Input Resistor100kΩ
Resistor Ratio1
Pd - Power Dissipation200mW
Voltage - Input(Max)(VI(off))500mV
Input Voltage (VI(on)@Ic,Vce)3V@1mA,300mV
Current - Collector(Ic)20mA

Technical details

Pre-Biased Bipolar Transistor (BJT) 50V 20mA 200mW Surface Mount SOT-363

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