DIODES DCX114YUQ-7-F

DIODES · Transistors (BJTs) · MPN DCX114YUQ-7-F

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Specifications

Current - Collector Cutoff-
Transition frequency(fT)250MHz
Emitter-Base Voltage VEBO5V
DC Current Gain100
Vce Saturation(VCE(sat))-
Output Voltage(VO(on))300mV@5mA,0.25mA
Input Resistor10kΩ
Resistor Ratio4.7
Pd - Power Dissipation200mW
Current - Collector(Ic)100mA
Input Voltage (VI(on)@Ic,Vce)1.4V@1mA,300mV
Voltage - Input(Max)(VI(off))1.4V

Technical details

Pre-Biased Bipolar Transistor (BJT) 50V 100mA 200mW Surface Mount SOT-363

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