DIODES DCX114EUQ-13R-F

DIODES · Transistors (BJTs) · MPN DCX114EUQ-13R-F

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Specifications

Current - Collector Cutoff-
Transition frequency(fT)250MHz
Emitter-Base Voltage VEBO-
DC Current Gain30
Vce Saturation(VCE(sat))-
Output Voltage(VO(on))-
Input Resistor10kΩ
Resistor Ratio1
Pd - Power Dissipation200mW
Voltage - Input(Max)(VI(off))-
Input Voltage (VI(on)@Ic,Vce)-
Current - Collector(Ic)100mA

Technical details

30 200mW 100mA 50V 1 NPN, 1 PNP Pre-Biased SOT-363 Bipolar Transistor Arrays, Pre-Biased RoHS

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