DIODES DCX114EUQ-13-F

DIODES · Transistors (BJTs) · MPN DCX114EUQ-13-F

No reviews yet — be the first to review DIODES DCX114EUQ-13-F.

Specifications

Current - Collector Cutoff-
Transition frequency(fT)250MHz
Emitter-Base Voltage VEBO-
DC Current Gain100
Vce Saturation(VCE(sat))-
Output Voltage(VO(on))300mV
Input Resistor10kΩ
Resistor Ratio1
Pd - Power Dissipation200mW
Current - Collector(Ic)100mA
Voltage - Input(Max)(VI(off))3V
Input Voltage (VI(on)@Ic,Vce)1.9V

Technical details

Pre-Biased Bipolar Transistor (BJT) 50V 100mA 200mW Surface Mount SOT-363

Related Transistors (BJTs)