DIODES DCX114EU-13R-F

DIODES · Transistors (BJTs) · MPN DCX114EU-13R-F

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Specifications

Current - Collector Cutoff-
Transition frequency(fT)250MHz
Emitter-Base Voltage VEBO-
DC Current Gain100
Vce Saturation(VCE(sat))-
Output Voltage(VO(on))-
Input Resistor10kΩ
Resistor Ratio1
Pd - Power Dissipation200mW
Voltage - Input(Max)(VI(off))3V
Input Voltage (VI(on)@Ic,Vce)1.9V
Current - Collector(Ic)100mA

Technical details

Pre-Biased Bipolar Transistor (BJT) 1 PNP Pre-Biased Transistor, 1 NPN 50V 100mA 200mW Surface Mount SOT-363

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