DIODES DCP69A-13

DIODES · Transistors (BJTs) · MPN DCP69A-13

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Specifications

Current - Collector Cutoff100nA
Transition frequency(fT)250MHz
Collector - Emitter Voltage VCEO20V
Emitter-Base Voltage VEBO5V
DC Current Gain85
Pd - Power Dissipation1W
Number1 PNP
typePNP
Current - Collector(Ic)1A
Operating Temperature-55℃~+150℃
Vce Saturation(VCE(sat))500mV

Technical details

Bipolar (BJT) Transistor PNP 20V 1A 1W Surface Mount SOT-223

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