DIODES DCP56-13

DIODES · Transistors (BJTs) · MPN DCP56-13

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Specifications

Current - Collector Cutoff100nA
Transition frequency(fT)200MHz
Collector - Emitter Voltage VCEO80V
DC Current Gain40
Pd - Power Dissipation1W
typeNPN
Current - Collector(Ic)1A
Operating Temperature-55℃~+150℃
Vce Saturation(VCE(sat))500mV

Technical details

80V 40 NPN 1A SOT-223 Single Bipolar Transistors RoHS

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