DIODES BST52TA

DIODES · Transistors (BJTs) · MPN BST52TA

No reviews yet — be the first to review DIODES BST52TA.

Specifications

Current - Collector Cutoff10uA
Transition frequency(fT)-
Collector - Emitter Voltage VCEO80V
DC Current Gain1000
Pd - Power Dissipation1W
typeNPN
Current - Collector(Ic)500mA
Operating Temperature-55℃~+150℃@(Tj)
Vce Saturation(VCE(sat))1.3V

Technical details

80V 1000 NPN 500mA SOT-89 Single Bipolar Transistors RoHS

Related Transistors (BJTs)