DIODES BCX5616QTC

DIODES · Transistors (BJTs) · MPN BCX5616QTC

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Specifications

Current - Collector Cutoff100nA
Transition frequency(fT)150MHz
Collector - Emitter Voltage VCEO80V
Emitter-Base Voltage VEBO6V
DC Current Gain100
Pd - Power Dissipation1.5W
Number1 NPN
typeNPN
Current - Collector(Ic)1A
Operating Temperature-65℃~+150℃
Vce Saturation(VCE(sat))500mV

Technical details

Bipolar (BJT) Transistor NPN 80V 1A 150MHz 1.5W Surface Mount SOT-89

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