DIODES BCP5616TC

DIODES · Transistors (BJTs) · MPN BCP5616TC

No reviews yet — be the first to review DIODES BCP5616TC.

Specifications

Current - Collector Cutoff20uA
Transition frequency(fT)125MHz
Collector - Emitter Voltage VCEO80V
Emitter-Base Voltage VEBO5V
DC Current Gain40
Pd - Power Dissipation2W
Number1 NPN
typeNPN
Current - Collector(Ic)1A
Operating Temperature-55℃~+150℃
Vce Saturation(VCE(sat))500mV

Technical details

Bipolar (BJT) Transistor NPN 80V 1A 125MHz 2W Surface Mount SOT-223

Related Transistors (BJTs)